| 摘要 |
<p>A III-nitride semiconductor light emitting device and a method for manufacturing the same are provided to reduce a crystal defect of the nitride semiconductor layer and to improve external quantum efficiency by using a substrate with a wide scattering surface. A concavo-convex part of a substrate(90) is formed with a polygonal pattern. The surface of the polygonal pattern intersects a scribing line. A first III nitride semiconductor layer(94) with a first conductivity is positioned on a substrate. A second III nitride semiconductor layer(96) is formed on the upper part of the first III nitride semiconductor layer. An active layer(95) is positioned between the first III nitride semiconductor layer and the second III nitride semiconductor layer and emits the light by re-coupling the electron and the hole.</p> |
