<p>A manufacturing method of a phase change memory device is provided to decrease the non-resistance of bottom electrode contact and increase the thermal efficiency. A manufacturing method of a phase change memory device comprises a step for forming a lower part phase change material layer on a semiconductor substrate(100); a step for forming a lower part phase change material pattern(130); a step for forming the upper part phase change material layer; a step for forming the upper part phase change material pattern(140). The semiconductor substrate can have a word line(110) and a laminated diode(125). The lower part phase change material layer contacts with a diode. The lower part phase change material pattern is formed on the diode by etching the lower part phase change material layer. The upper part phase change material layer covers the lower part phase change material pattern.</p>
