发明名称 |
Process of manufacturing a trench gate semiconductor device |
摘要 |
<p>A process of manufacturing a trench gate semiconductor device comprises providing a semiconductor material (600,602); placing the semiconductor material in a reaction chamber; forming a trench (606) at a surface of the semiconductor material; growing an oxide lining (608) on the sidewalls and floor of the trench; depositing a polysilicon layer (610) in the trench; etching the polysilicon layer such that a portion (612) thereof remains near a bottom of the trench; etching a portion of the oxide lining from the sidewalls of the trench, leaving a remaining portion of the oxide lining; performing an anisotropic silicon etch to depress the surface of the portion of the polysilicon layer below the surface of the remaining portion of the oxide lining; heating the semiconductor material to form a first oxide layer (618) on the surface of the portion of the polysilicon layer and a second oxide layer (616) on the sidewalls of the trench; removing the first oxide layer; and depositing a polysilicon layer (619) in the trench to form a gate electrode.</p> |
申请公布号 |
EP2020681(A2) |
申请公布日期 |
2009.02.04 |
申请号 |
EP20080016928 |
申请日期 |
2000.05.24 |
申请人 |
ADVANCED ANALOGIC TECHNOLOGIES, INC. |
发明人 |
GRABOWSKI, WAYNE B.;WILLIAMS, RICHARD K. |
分类号 |
H01L21/336;H01L21/76;H01L21/8242;H01L29/08;H01L29/10;H01L29/423;H01L29/739;H01L29/78;H01L29/808 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|