| 摘要 |
An MgO film having a high filling rate is provided. A vapor source (23) is arranged in a vacuum chamber (12), and vapor of MgO is generated by irradiating the vapor source with an electron beam (28), while introducing oxygen gas and gaseous water. At this time, the introducing quantity of the water is specified so that the number of water molecules remaining in the vacuum chamber is 2.99x10-1 times the number of the water molecules introduced into the vacuum chamber or more. Thus, the MgO film having a high peak strength of a (110) plane orientation is obtained. Since the MgO film wherein a (110) plane is preferentially oriented has a high filling rate, and a gas discharge speed is low, the film is excellent in anti-sputtering characteristics.
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