CMOS IMAGE DEVICE AND FABRICATION METHOD THEREOF

摘要

A CMOS image sensor and a manufacturing method thereof are provided to prevent the generation of the dark current due to the damage of photodiode. A CMOS image sensor comprises a pixel array area arranged in a semiconductor substrate(300). The pixel array area includes an active pixel section and an optical cut-off pixel section. An active pixel section and an optical cut-off pixel section includes a photodiode(304). The optical cut-off pixel section is arranged at the neighboring of the active pixel section. The optical cut-off pixel section includes a light barrier metal pattern(344) blocking the light. A light barrier metal pattern is arranged on the photodiodes of the optical cut-off pixel section. The light barrier metal pattern is connected to the ground(309) of the semiconductor substrate.