NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT

摘要

A non-volatile memory device using a register is provided to reduce or minimize a peak current value used in a writing operation by preventing an overlap between peak periods of write pulses. A non-volatile memory device using a register includes a plurality of non-volatile memory cells and a writing circuit. The writing circuit is formed to prevent an overlap between peak periods of writing pulses provided within a divided writing period. The wiring pulses include set pulses and reset pulses for writing reset data in the non-volatile memory cells.