PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A phase change memory device and a manufacturing method thereof are provided to reduce the amount of the reset current applied to the phase change material pattern by preventing the loss of heat from the lower electrode. A phase change memory device comprises a lower electrode(135), a heat interception pattern(142), a phase change material pattern(144), and an upper electrode(146). The lower electrode electrically connects with the semiconductor substrate. The heat-blocking pattern is arranged on the lower electrode. The heat interception pattern comprises srRuO3 and SrHfO3. The phase change material pattern is arranged on the heat-blocking pattern. The upper electrode is arranged on the phase change material pattern.