| 发明名称 |
Semiconductor device having a quantum well structure including dual barrier layers, semiconductor laser employing the semiconductor device and methods of manufacturing the semiconductor device and the semiconductor laser. |
| 摘要 |
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| 申请公布号 |
EP1553670(B1) |
申请公布日期 |
2009.02.04 |
| 申请号 |
EP20040257083 |
申请日期 |
2004.11.16 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, KI-SUNG |
| 分类号 |
H01S5/34;H01S5/343;H01S5/183;H01S5/323 |
主分类号 |
H01S5/34 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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