SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to increases the mobility of the majority carrier passing through the channel of transistor without the division of PMOS and NMOS. The semiconductor device includes a semiconductor substrate(100) which comprises a gate structure(110), a source and drain region(102), an etch stopping layer(130) and a stress layer(140). A gate structure includes a gate electrode(114) and a spacer(116). Spacers can be formed at both side walls of the gate electrode. The source and drain regions are overlapped with two parts of the gate structure. The etch stopping layer is formed on the semiconductor substrate in order to cover the gate structure. The etch stopping layer has the first area on the spacer and the second area on a gate electrode. The etch stopping layer can have the third region on the source and drain regions.