METHOD OF FORMING A FERRO-ELECTRIC LAYER AND METHOD OF MANUFACTURING A FERRO-ELECTRIC CAPACITOR

摘要

A method of forming a Ferro-electric layer and a method of manufacturing a Ferro-electric capacitor are provided to form a layer having the ferroelectric property by crystallizing at the deposition temperature of 650°C or less. A formation method of a ferroelectric layer comprises a step for vaporizing at least two kinds of the organic metal sources(S120); a step for forming ferroelectric grains(S140); and a step for forming the ferroelectric layer(S150). The organic metal sources are the precursors of the elements of the ferroelectric layer. The organic metal sources are vaporized in the vaporizer positioned at the neighboring of the reaction chamber. Ferroelectric grains are repetitively formed on the substrate by injecting the vaporized source gases into the reaction chamber having the oxide gas. The ferroelectric layer is formed on the top of the substrate by growing the ferroelectric grains.