FABRICATING METHOD OF A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A manufacturing method of a semiconductor integrated circuit device is provided to steadily fill up the recess with the semiconductor layer without generating the void in the recess. A manufacturing method of a semiconductor integrated circuit device comprises a step for forming the first insulating layer(110); a step for forming the semiconductor layer; a step for forming the second insulating layer; a step for partly removing the semiconductor layer, a step for removing the second insulating layer; a step for performing an optional epitaxial process(140) in the semiconductor layer. The first insulating layer includes the recess. The semiconductor layer covers the recess.