IN SITU DEPOSITION OF DIFFERENT METAL-CONTAINING FILMS USING CYCLOPENTADIENYL METAL PRECURSORS

摘要

In situ deposition of different metal-containing films using cyclopentadienyl metal precursors is provided to prevent the interface from being formed between the aluminum oxide and the Zr / Hf oxide. The substrate is provided within the deposition chamber(20). The cycle of the first atomic layer deposition (ALD) process is repeatedly performed to deposit the layer of the first substance on the substrate within the deposition chamber(22). The first cycles includes the process for pulse-injecting the cyclopentadienyl metal precursor. The second ALD process is repeatedly performed to deposit the second material layer on the first substance layer within the deposition chamber(24). The second material includes the metal and the different metal of the cyclopentadienyl metal precursor.