FABRICATING METHOD OF ATOMIC FORCE CANTILEVER AND THE SAME

摘要

An atomic force cantilever and a method of manufacturing the cantilever are provided to form a passivation layer and then form a tungsten probe so as to maintain high sensitivity of the cantilever. A method of manufacturing an atomic force cantilever includes a step of forming a MOSFET(Metal Oxide Semiconductor Field Effect Transistor) using an SOI(Silicon On Insulator), a step of forming a passivation layer on the overall surface of the MOSFET and patterning the passivation layer to expose a gate of the MOSFET, a step of etching a lower silicon layer and an insulating layer of the SOI substrate, and a step of forming a tungsten probe(180) on the gate.