发明名称 |
Use of supercritical fluid for low effective dielectric constant metallization |
摘要 |
An embodiment of the invention is a method of manufacturing an integrated circuit. The method includes forming a capping layer of a back end structure (step 706), drilling an extraction line from the capping layer to an inter-metal dielectric layer (step 708), performing a supercritical fluid process to remove portions of the inter-metal dielectric layer that are coupled to the extraction line (step 710): thereby forming a denuded dielectric region. Another embodiment of the invention is an integrated circuit 2 having a back-end structure 5 coupled to a front-end structure 4. The back-end structure 5 having a first metal level 22. The first metal level 22 having metal interconnects 15 and an inter-metal dielectric layer 19. The back-end structure 5 further containing an extraction line 24 and a denuded dielectric region 25 coupled to the extraction line 24.
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申请公布号 |
US7485963(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20060614094 |
申请日期 |
2006.12.21 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
PAPA RAO SATYAVOLU S.;GRUNOW STEPHAN;MATZ PHILLIP D. |
分类号 |
H01L23/48;H01L23/52;H01L23/522;H01L23/532 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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