发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A method of manufacturing a semiconductor device is provided. The method includes: (A) forming an insulating film with a porous structure on a substrate; (B) forming a trench in the insulating film, the trench being used for forming an interconnection; (C) depositing a metal layer over the insulating film such that the trench is filled in with the metal layer; (D) forming the interconnection by removing an excess metal layer outside the trench; (E) modifying a surface of the insulating film to form a modified layer on the insulating film; and (F) forming a metal film selectively on the interconnection by using plating solution after the (E) modifying process.
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申请公布号 |
US7485566(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20060543947 |
申请日期 |
2006.10.06 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
KAWAHARA NAOYOSHI;UENO KAZUYOSHI |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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