| 摘要 |
Provided are plasma etching method and apparatus by which no special region for detecting an end point is required to be set on a silicon substrate. In etching process, SF6 gas is brought into the plasma state and a Si film on a lower layer film formed on the silicon substrate is etched. The etching process is composed of a large quantity supplying step of supplying a large quantity of SF6 gas, and a small quantity supplying step of supplying a small quantity of SF6 gas. An end point detection processing section (34) measures light emitting intensity of Si or SiFx in the plasma in the small quantity supplying step, and when the measured light emitting intensity is at a previously set reference value or lower, the end point detection processing section judges it as an etching end point. |
