| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to secure fixed channel length even though a cell region is decreased by performing a floating body cell of vertical type. A tube type channel(230) is formed on a semiconductor substrate(210), and is connected to a first conductive line and a second conductive line. A bias electrode(240) is filled in an inner side of the tube type channel, and is connected to the semiconductor substrate. An insulating film is positioned between the tube type channel and the bias electrode. A surrounding gate electrode is formed in an outer side of the tube type channel. The first conductive line is connected to a bottom of the tube type channel.
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