发明名称 |
Nonvolatile semiconductor storage device and its manufacturing method |
摘要 |
There is provided a nonvolatile semiconductor storage device less subject to variances of electric characteristics among memory cells. A floating gate electrode provided on a substrate is made of two or more materials different in carrier trapping efficiency so as to accumulate carriers and thereby store data in the floating gate electrode. Thus a region without so large changes of the threshold voltage is produced, and the portion with a small change is used as the margin for circuit operations, thereby to eliminate variances among cells and realize high-speed operations.
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申请公布号 |
US7485527(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20060456024 |
申请日期 |
2006.07.06 |
申请人 |
SONY CORPORATION |
发明人 |
KAWASHIMA NORIYUKI;TAIRA KENICHI |
分类号 |
H01L21/336;H01L21/8247;G11C11/56;G11C16/04;H01L21/28;H01L21/3205;H01L21/4763;H01L27/115;H01L29/423;H01L29/49;H01L29/51;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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