发明名称 |
Method of manufacturing a body-contacted finfet |
摘要 |
A silicon containing fin is formed on a semiconductor substrate. A silicon oxide layer is formed around the bottom of the silicon containing fin. A gate dielectric is formed on the silicon containing fin followed by formation of a gate electrode. While protecting the portion of the semiconductor fin around the channel, a bottom portion of the silicon containing semiconductor fin is etched by a isotropic etch leaving a body strap between the channel of a finFET on the silicon containing fin and an underlying semiconductor layer underneath the silicon oxide layer. The fin may comprise a stack of inhomogeneous layers in which a bottom layer is etched selectively to a top semiconductor layer. Alternatively, the fin may comprise a homogeneous semiconductor material and the silicon containing fin may be protected by dielectric films on the sidewalls and top surfaces of the silicon containing fin.
|
申请公布号 |
US7485520(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20070773607 |
申请日期 |
2007.07.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;DYER THOMAS W.;MANDELMAN JACK A.;RAUSCH WERNER |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|