发明名称 Diode-less array for one-time programmable memory
摘要 A one-time programmable memory array includes a first row conductor extending in a first row direction and disposed at a first elevation, a second row conductor extending in a second row direction and disposed at a second elevation and a column conductor extending in a column direction and disposed adjacent to the first row conductor and adjacent to the second row conductor. The array also includes a dielectric layer covering at least a portion of the column conductor, a fuse link coupled between the dielectric layer on the column conductor and the second row conductor.
申请公布号 US7486534(B2) 申请公布日期 2009.02.03
申请号 US20050297529 申请日期 2005.12.08
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 CHEN KUAN FU;CHEN YIN JEN;HAN TZUNG TING;CHEN MING SHANG
分类号 G11C17/00 主分类号 G11C17/00
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