发明名称 |
Production of elemental films using a boron-containing reducing agent |
摘要 |
The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
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申请公布号 |
US7485340(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20060634818 |
申请日期 |
2006.12.05 |
申请人 |
ASM INTERNATIONAL N.V. |
发明人 |
ELERS KAI-ERIK;SAANILA VILLE ANTERO;KAIPIO SARI JOHANNA;SOININEN PEKKA JUHA |
分类号 |
C23C16/08;C23C16/02;C23C16/04;C23C16/32;C23C16/34;C23C16/44;C23C16/455;C30B25/02;C30B25/14;C30B29/02;C30B29/36;C30B29/38;H01L21/285;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
C23C16/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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