Method for fabricating superlattice semiconductor structure using chemical vapor deposition

摘要

The invention provides a method for fabricating a superlattice semiconductor structure capable of achieving excellent interfacial properties and uniformity. For the superlattice semiconductor structure according to the invention, a substrate is mounted on a susceptor within a process chamber. First and second source gases are supplied simultaneously to two different areas on the susceptor within the chamber to form first and second source gas areas separate from each other. The susceptor is rotated to revolve the substrate through the first and second source gas areas.