| 摘要 |
In a method for dry-etching an interlayer insulating film, the interlayer insulating film is microfabricated while forming a polymer film on an ArF resist or a KrF resist arranged on the interlayer insulating film by an etching gas. The etching gas is introduced at a pressure of 0.5Pa or less, and etching is performed while forming the polymer film having a C-F bonding peak near 1,200cm-1, a C-N bonding peak near 1,600cm-1 and a C-H bonding peak (spectrum measured by a Fourier transform infrared spectrophotometer) near 3,300cm-1.
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