EMCZ INGOT GROWER IMPROVED IN ELECTRODE DISPOSITION STRUCTURE AND EMCZ INGOT GROWING METHOD THEREOF

摘要

An EMCZ ingot growing device and an EMCZ(Electro Magnetic Czochralski method) ingot growing method using the same are provided to resolve change and pollution problem of melt convection by directly not contacting a semiconductor melt with an electrode for supplying a current to the semiconductor melt. A quartz crucible(101) is installed inside a chamber(100), and is surrounded by a crucible supporting rod(102). A heater(103) is arranged in an outside of the crucible supporting rod. A magnetic field is supplied to a silicone melt inside the quartz crucible through an electromagnet coil(104). An electrode(105) is connected to the crucible supporting rod, and is formed in order to supply a current for generating Lorentz force. A lifter lifts a single crystalline ingot(1) grown from the silicone melt.