| 摘要 |
Disclosed are an arrangement and a production method for electrically connecting active semiconductor structures in or on a monocrystalline silicon layer (12) located on the front face (V) of silicon-on-insulator semiconductor wafers (SOI, 10) to the substrate (13). The electrical connection (20) is made through an insulator layer (11). A stack of layers (30 to 32, 70 to 72) is disposed above the connection piece (20) on the insulator layer (11).
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