发明名称 Zener diode and method for production thereof
摘要 A zener diode circuit includes a semiconductor substrate having an N-doped region and a P-doped region that form a PN junction. The N-doped region and the P-doped region have areas with widths that decrease as the N-doped region and the P-doped region approach the PN junction. The zener diode circuit also includes a transistor that provides current to the zener diode, and circuitry that detects a state of the zener diode.
申请公布号 US7485947(B2) 申请公布日期 2009.02.03
申请号 US20050499262 申请日期 2005.05.10
申请人 AUSTRIAMICROSYSTEMS AG 发明人 UNTERLEITNER FRANZ
分类号 H01L29/72;H01L21/329;H01L29/866 主分类号 H01L29/72
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