发明名称 |
Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device |
摘要 |
A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease. |
申请公布号 |
US7485570(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20050206955 |
申请日期 |
2005.08.19 |
申请人 |
FUJITSU LIMITED |
发明人 |
OWADA TAMOTSU;FUKUYAMA SHUN-ICHI;WATATANI HIROFUMI;INOUE KENGO;SHIMIZU ATSUO |
分类号 |
H01L21/00;C23C16/30;H01L21/316;H01L21/469;H01L21/768 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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