| 发明名称 |
Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
| 摘要 |
A process for the preparation of low resistivity arsensic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates.
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| 申请公布号 |
US7485928(B2) |
申请公布日期 |
2009.02.03 |
| 申请号 |
US20050270790 |
申请日期 |
2005.11.09 |
| 申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FALSTER ROBERT J.;VORONKOV VLADIMIR;BORIONETTI GABRIELLA |
| 分类号 |
H01L27/01;H01L27/12;H01L31/0392 |
主分类号 |
H01L27/01 |
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