发明名称 |
NAND flash memory devices having shielding lines between wordlines and selection lines |
摘要 |
A NAND flash memory having a cell string structure includes a wordline configured to transfer a wordline voltage to a memory cell. A selection line is configured to transfer a selection voltage to a selection transistor connected to the memory cell and at least one shielding line is interposed between the wordline and the selection line and is operable to reduce capacitance-coupling between the wordline and the selection line during a programming operation.
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申请公布号 |
US7486554(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20060432072 |
申请日期 |
2006.05.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK KI-TAE;CHOI JUNG-DAL |
分类号 |
G11C11/34;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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