Methods/circuits for programming flash memory devices using overlapping bit line setup and word line enable intervals

摘要

A method of programming a flash memory device includes charging selection lines with a first voltage while applying program data to bit lines to during a bit line setup interval, then activating a block word line to electrically connect the selection lines to corresponding word lines, and then applying a second voltage, greater than the first voltage, to a selected one of the selection lines. Related devices are also disclosed.