发明名称 |
Nitride-based light emitting device and method of manufacturing the same |
摘要 |
Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.
|
申请公布号 |
US7485479(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20070649236 |
申请日期 |
2007.01.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEONG TAE-YEON;KIM KYOUNG-KOOK;SONG JUNE-O;LEEM DONG-SEOK |
分类号 |
H01L21/00;H01L33/06;H01L33/10;H01L33/32;H01L33/42 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|