| 发明名称 |
Dielectric interface for group III-V semiconductor device |
| 摘要 |
A Group III-V Semiconductor device and method of fabrication is described. A high-k dielectric is interfaced to a confinement region by a chalcogenide region.
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| 申请公布号 |
US7485503(B2) |
申请公布日期 |
2009.02.03 |
| 申请号 |
US20050292399 |
申请日期 |
2005.11.30 |
| 申请人 |
INTEL CORPORATION |
发明人 |
BRASK JUSTIN K.;DATTA SUMAN;DOCZY MARK L.;BLACKWELL JAMES M.;METZ MATTHEW V.;KAVALIEROS JACK T.;CHAU ROBERT S. |
| 分类号 |
H01L21/335;H01L21/338;H01L27/108 |
主分类号 |
H01L21/335 |
| 代理机构 |
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