发明名称 |
Nitride-based light-emitting device having grid cell layer |
摘要 |
A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.
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申请公布号 |
US7485897(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20050077536 |
申请日期 |
2005.03.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
SEONG TAE-YEONG;KIM KYOUNG-KOOK;SONG JUNE-O;LEEM DONG-SEOK |
分类号 |
H01L21/28;H01L27/15;H01L29/22;H01L31/12;H01L33/06;H01L33/32;H01L33/38;H01L33/42;H01S5/323 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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