| 摘要 |
A mechanical-quantity measuring device capable of measuring a strain component of structure deformation for an object to be measured in a particular desired direction with long life, high reliability and high precision. A strain sensor is formed on a semiconductor substrate. Impurity-diffused layers considering the crystal orientation of the semiconductor single crystalline substrate are used to form a Wheatstone bridge circuit on the substrate. The Wheatstone bridge circuit can operate on one substrate since the semiconductor single crystal has the anisotropy of piezoresistance effect.
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