发明名称 |
Apparatus and method for optical amplification in indirect-gap semiconductors |
摘要 |
Methods and corresponding apparatus for optical amplification in semiconductors, particularly indirect band-gap semiconductors, and most particularly in silicon. A first aspect of the invention employs certain doping elements to provide inter-band-gap energy levels in combination with optical or current-injection pumping-The doping element, preferably a noble metal and most preferably Gold, is chosen to provide an energy level which enables an energy transition corresponding to a photon of wavelength equal to the signal wavelength to be amplified. The energy transition may be finely "adjusted" by use of standard doping techniques (such as n-type or p-type doping) to alter the conduction and valence band energy levels and thereby also the magnitude of the energy transition. A second aspect of the invention relates to the use of a non-homogeneous heat distribution which has been found to lead to optical amplification effects.
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申请公布号 |
US7486437(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20040577858 |
申请日期 |
2004.11.10 |
申请人 |
RAMOT AT TEL AVIV UNIVERSITY LTD. |
发明人 |
RUSCHIN SHLOMO;STEPANOV STANISLAV |
分类号 |
H04B10/17;H01L;H01L31/0256 |
主分类号 |
H04B10/17 |
代理机构 |
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主权项 |
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地址 |
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