| 摘要 |
According to the present invention, a connection hole is formed above a substrate by an etching treatment using a first resist film as a mask, and after the first resist film is removed by stripping, the substrate is exposed to a water vapor atmosphere. Thus, an amine component in the film is removed before formation of a second resist film for forming a wiring groove, thereby preventing contamination of the second resist film. The present invention is a method for forming wiring of a semiconductor device using a dual damascene method, in which the resist film for forming the wiring groove can be prevented from being contaminated with the amine component or the like.
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