发明名称 |
Semiconductor-on-insulator (SOI) strained active areas |
摘要 |
Differentially strained active regions for forming strained channel semiconductor devices and a method of forming the same, the method including providing a semiconductor substrate comprising a lower semiconductor region, an insulator region overlying the lower semiconductor region and an upper semiconductor region overlying the insulator region; forming a doped area of the insulator region underlying a subsequently formed NMOS active region; patterning the upper semiconductor region to form the NMOS active region and a PMOS active region; carrying out a thermal oxidation process to produce a differential-volume expansion in the PMOS active region with respect to the NMOS active region; forming recessed areas comprising the insulator region adjacent either side of the PMOS active region; and, removing layers overlying the upper semiconductor region to produce differentially strained regions comprising the PMOS and NMOS active regions.
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申请公布号 |
US7485929(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20060522282 |
申请日期 |
2006.09.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
CHEN HAO-YU;YANG FU-LIANG |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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