发明名称 |
Electrostatic discharge protection device |
摘要 |
An electrostatic discharge protection device comprising a multi-finger gate, a first lightly doped region of a second conductivity, a first heavily doped region of the second conductivity, and a second lightly doped region of the second conductivity. The multi-finger gate comprises a plurality of fingers mutually connected in parallel over an active region of a first conductivity. The first lightly doped region of a second conductivity is disposed in the semiconductor substrate and between two of the fingers. The first heavily doped region of the second conductivity is disposed in the first lightly doped region of the second conductivity. The second lightly doped region of the second conductivity is beneath and adjoins the first lightly doped region of the second conductivity.
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申请公布号 |
US7485905(B2) |
申请公布日期 |
2009.02.03 |
申请号 |
US20060459650 |
申请日期 |
2006.07.25 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
HUNG FENG-CHI;LEE JIAN-HSING;CHEN HUNG-LIN;CHANG DENG-SHUN |
分类号 |
H01L29/80;H01L21/336 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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