| 摘要 |
<p>Provided is a method for manufacturing a surface-emitting laser (100) capable of forming a photonic crystal structure inside a semiconductor highly accurately and easily without direct bonding. It is a method by laminating on a substrate (105) a plurality of semiconductor layers including an active layer (130) and a first semiconductor layer (160) having a photonic crystal structure formed therein, the method including the steps of forming a second semiconductor layer (165) on a first semiconductor layer (160) to form the photonic crystal structure, forming a plurality of microholes (170) in the second semiconductor layer (165), forming a low refractive index portion (175) in a part of the first semiconductor layer (160) via the plurality of microholes (170) thereby to provide the first semiconductor layer (160) with the photonic crystal structure having a one-dimensional or two-dimensional refractive index distribution in a direction parallel to the substrate, and forming a third semiconductor layer (180) by crystal regrowth from a surface of the second semiconductor layer (165).</p> |
