| 摘要 |
<p>A semiconductor device and a method of manufacturing the same are provided to improve the fabrication efficiency by omitting the use of the additional conductive line or the contact element etc. Provided is the first and second semiconductor chips(110,120) having the constant circuit. The trench and second trench having the depth of 10 - 100mum in the central part of the first and the second semiconductor chip are formed. The first and second metal electrodes(112,114) applying current in each constant circuit in each trench lower-part are formed. The conductive material(130) of the liquid is charged in one of a plurality of firsts and the second trench. The first and the second semiconductor chip are laminated in order to be faced with each other.</p> |
