发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF, AND LED PACKAGE
摘要 A semiconductor light emitting device and a method of manufacturing the same are provided to have the radiation via for the light emitting diode itself by using one or more pad and to improve the luminous efficiency. The semiconductor light emitting device(100) is comprised of the first conductivity semiconductor layer and the active layer(117) formed on the first conductivity semiconductor layer(115), and the second conductivity semiconductor layer(119) formed on the active layer and the first pad(125). The first pad is penetrated to the prescribed part of the second conductivity semiconductor layer and is connected to the second conductivity semiconductor layer. The first pad and the second pad are penetrated into each layer. The substrate(111) is formed beneath the first conductivity semiconductor layer. The first and the second pad are formed through the substrate.
申请公布号 KR20090011372(A) 申请公布日期 2009.02.02
申请号 KR20070074882 申请日期 2007.07.26
申请人 LG INNOTEK CO., LTD. 发明人 KIM, HEE JIN;SON, HYO KUN
分类号 H01L33/00 主分类号 H01L33/00
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