| 摘要 |
A semiconductor memory device and a driving method thereof are provided to perform a safe and rapid operation by driving a GIO(Global Input Output) line with a terminal voltage level. A global data line is formed to transfer data between a core region and an interface area. A main driving unit(310) performs a termination-driving operation for the global data line with a predetermined termination voltage level in response to a termination enable signal(EN_TERM). An overdriving signal generation unit(330) for generating an over driving signal(EN_OVD) is activated in an initial state of a termination drive period of the global data line for a constant time in response to a termination enable signal and an inner lead pulse. An auxiliary driving unit(350) performs additionally a termination-driving operation for the global data line in response to an overdriving signal. |
