THE PATTTERN FORMING METHOD BY USING THE DOPANT DENSITY DISTRIBUTION

摘要

A method for forming pattern is provided to prevent generation of a key hole in material filled between hard mask patterns by controlling a slope of the hard mask pattern. A substrate(200) has a conductive film(210). A first mask film(220) is formed on the conductive film. A second mask film is formed on the first mask film. The second mask pattern(230) having a positive slope is formed by pattering the second mask film, has a dopant density distribution according to height of the second mask film, and includes at least one among SiO2, SiN, poly Si, SiON, and TiN. A part or whole part of the first mask film is etched by using the second mask pattern as an etching mask. The second mask film is P-type poly Si. The dopant density is decreased according to increase of height from a part contacted with the first mask film.