| 摘要 |
<p>A silicon single-crystal pullup apparatus comprising a crucible as a reservoir of molten silicon; a heater for heating the crucible; crucible driving means for rotation and/or vertical movement of the crucible; a chamber for accommodating the crucible and the heater; and magnetic field application means for application of a magnetic field to the chamber, disposed outside the chamber, wherein the magnetic field application means is provided so as to run along the outer circumferential surface of the chamber and is capable of not only generating an iso-magnetic field diagram approximately concentric with respect to the central axis of the crucible but also applying a magnetic field so that the magnetic field strength unilaterally increases or decreases from the surface of the molten silicon toward the bottom of the crucible. Accordingly, any unstable convection of the molten silicon can be inhibited, and fluctuations in a minor zone of the oxygen concentration and dopant concentration of silicon single crystal can be prevented.</p> |
