DISPLAY DEVICE

摘要

A display device is provided to have the protection circuit which is comprised of the thin film transistor having the high internal pressure and the small size. The gate isolation layer(104) is formed on the gate electrode(102). The microcrystalline semiconductor layer is formed on the gate isolation layer. The buffer layer(108) is formed on the microcrystalline semiconductor layer. The source and drain region(110) are formed on the buffer layer. The source electrode contacting with the source region is formed. The drain electrode(112) contacting with the drain region is formed.