发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 <p>A substrate processing apparatus is provided to exhaust the proper amount according to the amount of the air current generated by the rotation of the processed substrate by controlling the number of rotation of the multiblade centrifugal fan. The spin chuck(40) supports the wafer (W). The spin chuck is rotated in the motor(41). The resist nozzle(42) supplies the resist liquid to the wafer. The treatment vessel(43) accommodates the spin chuck. The exhaust means(44) is disposed at the bottom of the treatment vessel. The multiblade centrifugal fan(50) is arranged in the periphery side of the treatment vessel. The controller(60) is connected to the drive power(51a) of the multiblade centrifugal fan and the motor.</p>
申请公布号 KR20090012037(A) 申请公布日期 2009.02.02
申请号 KR20080038317 申请日期 2008.04.24
申请人 TOKYO ELECTRON LIMITED 发明人 TERADA KAZUO;SAKAMOTO KAZUO;UEHARA TAKESHI
分类号 H01L21/027;H01L21/68 主分类号 H01L21/027
代理机构 代理人
主权项
地址