| 摘要 |
A film formation method, apparatus for semiconductor process and computer readable medium are provided to consecutively perform the deposition of the Si system inorganic film while maintaining vacuum. The wafer boat having a plurality of semiconductor wafers is mounted is loaded within the process vessel(step 1). In the state rotating the wafer boat, the film forming process of the amorphous carbon film is performed for the first time(step 2). The purge gas from the fuzzy gas supply source is introduced within the process vessel(step 3). In maintaining the decompression state, the Si based inorganic film is successively formed by the switching of the gas into the in-situ process(step 4).
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