| 摘要 |
A method for forming copper metal line of semiconductor device is provided to prevent bridge phenomena of a top wiring by forming separate spacer in an inner side wall inside a trench. A capping layer(220) and an interlayer insulating film(230) are successively laminated on a substrate(210) on which a bottom wiring(212) is formed. A trench is formed by etching the interlayer insulating film with a first photoresist film pattern, and defines a top wiring region. A spacer(250') is formed in a side wall inside the trench. A second photoresist film pattern(260) is formed in order to open the trench connected to a via. The via(234) is formed by removing the interlayer insulating film exposed by the spacer using the second photoresist film pattern. The spacer is removed. A barrier metal film is formed in an inner wall of the via and the trench. A cooper metal line is filled inside the via and the trench.
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