发明名称 METHOD OF REMOVING SILICON PARTICLE
摘要 A method for removing the silicon particle is provided to effectively remove the silicon particle generated in the wafer pattern by laminating the protective film on the wafer before the wet process. The protective film is laminated on the wafer front side part for the manufacture of the image sensor. The backplane of wafer is grinded. The protective film is installed on the wafer to prevent silicon particles from being transferred to the wafer front side. The protective film is eliminated after the grinding of the wafer backside. The cleaning process on the wafer is performed. The cleaning process includes the IPA cleaning process for removing the adhesive(Sticky) remaining in the film stripping.
申请公布号 KR20090011517(A) 申请公布日期 2009.02.02
申请号 KR20070075170 申请日期 2007.07.26
申请人 DONGBU HITEK CO., LTD. 发明人 CHO, IN BAE
分类号 H01L21/304 主分类号 H01L21/304
代理机构 代理人
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