FABRICATION METHOD OF LARGE SIZED GALLIUM NITRIDE THICK FILM

摘要

A method for fabricating a large sized gallium nitride thick film is provided to obtain the gallium nitride thick film with high quality having the uniform thickness distribution and isotropic stress distribution by growing the gallium nitride thick film without a defect rapidly. A base substrate(110) for growing a GaN film is positioned inside a film growth reaction bath(100). The base substrate has different temperature according to a position by giving a temperature gradient according to the position of the base substrate. The reaction gas(120) is supplied from the inlet of the reaction bath to the base substrate. The GaN thick film is grown on the base substrate. The temperature gradient is given in a temperature range above a critical point in the base substrate.